Abstract
HfC-coated amorphous-Si field emitter arrays (FEAs) controlled by a built-in poly-Si thin-film transistor (TFT) was proposed and fabricated. Such FEAs were fabricated at relatively low temperatures by an Ar ion sputter sharpening so that a low-temperature poly-Si TFT process can be applied. We compared the comb-shaped gate structure and lightly doped drain (LDD)-structured TFT from the viewpoint of controlling field emission current. The LDD-structured TFT with a channel length of 50 µm and an LDD offset length of 2 µm withstands a high source drain voltage of more than 40 V. Successful control of FEAs by built-in TFT was demonstrated in a vacuum chamber. The fabrication and emission control characteristics of such a device will be reported in detail.
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