Abstract
In this work, the synthesis and characterization ofgraphene-metal nanocomposite, a transparent conductive layer, is examined. This transparent conductive layer is named graphene-Ag-graphene (GAG), which makes full use of the high electron mobility and high conductivity characteristics of graphene, while electromagnetically induced transparency (EIT) is induced by Ag nanoparticles (NPs). The nanocomposite preparation technique delivers three key parts including the transfer of the first layer graphene, spin coating of Ag NPs and transfer of the second layer of graphene. The GAG transparent conductive nanocomposite layer possess a sheet resistance of 16.3 ohm/sq and electron mobility of 14,729 cm2/(v s), which are superior to single-layer graphene or other transparent conductive layers. Moreover, the significant enhancement of photoluminescence can be ascribed to the coupling of the light emitters in multiple quantum wells with the surface plasmon Ag NPs and the EIT effect.
Highlights
Photoluminescence (PL) enhancement has attracted the attention of many researchers [1,2,3].Their methods include changing the structure of quantum wells, using high transparency and high conductivity conductive layers and proper device structures [4,5,6]
The refractive index of GaN-based layers are set as 2.4, including p-GaN, InGaN/GaN QW layer and n-GaN [37], and experimental data are used for the dielectric constant of Ag [27], and the refractive index of the capping layer is n
The three-dimension simulations are carried out with the assistance of the commercial software, finite-difference time-domain method (FDTD) Solutions, which is based on the numerical algorithm of the finite-difference time-domain (FDTD) method
Summary
Photoluminescence (PL) enhancement has attracted the attention of many researchers [1,2,3]. Their methods include changing the structure of quantum wells, using high transparency and high conductivity conductive layers and proper device structures [4,5,6]. The main transparent conducting layers are indium tin oxide (ITO) and zinc oxide (ZnO) [10,11,12,13]. The electron mobility is of paramountimportance in that it determines the transverse extension of the current [14,15].
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