Abstract
Integrated light-emitting diodes (LEDs) that operate in the UV spectral region were fabricated using GaN layers grown on sapphire substrates by metal-organic vapor phase epitaxy. Schottky-type LEDs and metal-oxide-semiconductor (MOS) LEDs were realized. The near-band-edge emission of GaN was observed in the electroluminescent spectra with reversed bias under pulsed-voltage conditions. The insertion of an aluminum oxide layer in the GaN-based LED leads to an increase in electroluminescent intensity.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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