Abstract
AbstractMicrosize integrated light‐emitting diodes (LEDs) that operate in the UV spectral region were fabricated using GaN layers grown on sapphire substrates by metal‐organic vapor phase epitaxy (MOVPE). Schottky‐type (ST) and metal‐oxide‐semiconductor (MOS) LEDs were realized. The near‐band‐edge emission of GaN was observed in the electroluminescent spectra with reversed bias under pulsed‐voltage conditions. The insertion of an aluminum oxide layer in the GaN‐based LED led to an increase in electroluminescent intensity. The internal optical absorption in the GaN layer of the GaN‐based ST‐LEDs was also estimated to be 75% of the emission light power. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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