Abstract
Low dimensional semiconductor structures such as quantum wires have recently received great attentions since new physical phenomena with applications to semiconductor lasers and other functional optical devices are expected[1,2]. To fabricate these quantum microstructures, selective growth on patterned substrates is one of the most attractive techniques[3-5]. In order to obtain real quantum wire devices, the structures with lateral width less than 15nm must be achieved. In this paper, we report a successful fabrication of the GaAs triangular-shaped quantum wires with ~10nm lateral width, showing both photoluminescence(PL) measurement and a high-resolution scanning electron micrograph(SEM) observation. The fabrication technique employed here is based on the MOCVD selective growth technique which we have developed recently[6].
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