Abstract
To explore Cu2ZnSnS4-based materials for solar cell applications, for the first time, Cu2Zn(Sn,Si)S4 thin films were fabricated using a two-step method that consists of sputtering and post-sulfurization. The films were characterized and then incorporated into solar cells. X-ray diffraction and Raman spectroscopy revealed the formation of Cu2Zn(Sn,Si)S4 structure with traces of a secondary phase after sulfurization treatments. The degree of sulfurization was enhanced as the temperature was increased. In addition, these techniques revealed that there was no silicon or silicide phase present. The Si/Sn atomic ratio was 0.04-0.10. The thin films exhibited Cu-poor and Zn-rich characteristics and high absorption coefficients. The direct optical band gap of the thin films ranged between 1.42 and 1.52 eV. Heterojunction solar cells (glass/Mo/Cu2Zn(Sn,Si)S4/CdS/i-ZnO/ZnO:Al/Al) were fabricated and exhibited the highest conversion efficiency of 0.427%. This study showed the feasibilities of fabricating Cu2Zn(Sn,Si)S4 thin films by a two-step method and using Cu2Zn(Sn,Si)S4 thin films as an absorber layer within a solar cell.
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