Fabrication of Bond and Etch Back Silicon on Insulator Using SiGe-MBE and Selective Etching Techniques

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ABSTRACTUndoped thin layer silicon on insulator has been fabricated using wafer bonding and selective etching techniques using an MBE grown Si0.7Ge0.3 layer as an etch stop. Defect free, undoped 200–350 nm silicon layers are routinely fabricated using this procedure. A new selective silicon-germanium etch has been developed that significantly improves the ease of fabrication of the BESOI material.