Abstract
In this study, we fabricated a 0.98NaNbO3-0.02CaSnO3 film on SrRuO3 coated (001)SrTiO3 single crystal substrate by pulsed laser deposition. A tiny amount of CaSnO3 alloying into NaNbO3 stabilized the antiferroelectric phase of NaNbO3. The c-axis of stabilized antiferroelectric phase in the 0.98NaNbO3-0.02CaSnO3 film grew along two directions of the in-plane and out-of-plane directions. These two types of antiferroelectric domains contributed to the stabilization of the antiferroelectric phase under a large applied electric field. The 0.98NaNbO3-0.02CaSnO3 film showed antiferroelectric double P–E response even at a high temperature of 180 °C and had energy storage property of recoverable energy storage density (W r) of 1.7 J cm−3 and storage efficiency (η) of 52%.
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