Abstract
AbstractPb0.99Nb0.02(Zr0.85Sn0.13Ti0.02)O3 (PNZST) antiferroelectric (AFE) thick films are successfully deposited on silicon‐based Pt and LaNiO3 electrodes by a sol‐gel method. The coexistence of ferroelectric (FE) and AFE phases are revealed in PNZST films by XRD, electric‐induced hysteresis loops, dielectric, and leakage current properties. Comparing with PNZST/Pt film, larger recoverable energy density and efficiency are obtained in PNZST/LaNiO3 film due to the lower FE phase proportion. It is analyzed and demonstrated by a thermodynamic model of AFE and FE coexistence system. In addition, the fatigue behaviors of both AFE films are also affected by the proportion of the coexisting FE phase. PNZST/LaNiO3 film exhibits good fatigue resistance on energy storage even after 1010 switching cycles, which is attractive to pulsed power applications.
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