Abstract
The imprint effect in ferroelectric materials can significantly enhance the performance of energy storage devices. Bi4Ti3O12 (BTO) and oxygen-deficient Bi4Ti3O11.2 (DBTO) thin films were deposited on single-crystal Nb-doped SrTiO3 substrates using pulsed laser deposition. In stark contrast, multilayer DBTO/BTO thin films incorporating an oxygen-deficient layer were also fabricated, with the DBTO layers having thicknesses of 5 nm and 10 nm, respectively. Both BTO and DBTO thin films exhibited epitaxial growth and c-axis-oriented crystallinity. Regarding ferroelectric properties, DBTO/BTO capacitors with an oxygen-deficient layer demonstrated a pronounced imprint effect in their ferroelectric hysteresis loops, compared to the BTO and DBTO capacitors. This effect was particularly noticeable in the DBTO/BTO capacitor with a 10 nm oxygen-deficient layer, as opposed to the thin film with a 5 nm oxygen-deficient layer. We suggest that the imprint effect can be attributed to localized electric field variations and imbalances in charge transport at the interface between the oxygen-depleted layer and the remaining thin film. Consequently, the imprint effect observed in the DBTO/BTO capacitors contributed to an enhancement in energy storage density and efficiency, compared to BTO and DBTO capacitors. This study demonstrates the potential of multilayer DBTO/BTO thin films in advancing capacitive energy storage systems.
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