Fabrication of a submicron source-drain gap for p–i–p field effect transistors using epitaxial diamond layers

Abstract

A p–i–p diamond field effect transistors (FETs), which consist of an epitaxial channel with submicron length, are fabricated. Two different fabrication processes to make p–i–p FETs are demonstrated, depending on how heavily B-doped diamond layers for source and drain are formed: ion implantation and selective deposition. The p–i–p FET is operated by the modulation of space charge limited current and featured a transconductance up to 9.1 mS/mm.