Abstract
This paper describes the fabrication of 0.2 µ m hole resist patterns in KrF excimer laser lithography. By using a SiNx single-layer halftone phase-shifting mask (PSM) and an in-house chemically amplified positive resist, 0.2 µ m hole resist patterns can be obtained with sufficient depth of focus (DOF). Furthermore, a 0.15 µ m hole resist pattern can also be fabricated by using the PSM.
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