Abstract
A transverse junction stripe (TJS) structure is used to fabricate AlGaAs/InGaP/AlGaAs double hetero (DH) visible lasers on semi-insulating (SI) GaAs substrates. The use of a buffer solution, during the liquid phase epitaxy (LPE) growth of AlGaAs/InGaP/AlGaAs DH wafers on Cr and O doped GaAs substrates, serves to suppress the AlGaAs/InGaP interfacial contamination. An Si 3N 4 film mask is laid down on the epitaxial wafer surface by chemical vapor deposition (CVD), and subsequently plasma etched to form 100 μm wide stripe in 〈110〉 direction. A Zn diffused transverse p- n junction effectively reduces the LD's InGaP active region, and allows for continuous wave operation at room temperature, which suggests that this TJS structure is suitable for the LPE growth of AlGaAs/InGaP/AlGaAs visible laser diodes.
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