Abstract
This work deals with the liquid-phase epitaxy (LPE) growth of In x Ga 1−x As y P 1−y materials lattice matched to GaAs. We examine the growth of two different In x Ga 1−x As yP 1−y compositions denoted A and B. They have 1.9 eV and 1.58 eV band gap energies respectively. We estimate the optical two-phase LPE growth conditions for such quaternaries and for multiple submicron layers of A-B Materials. We report the dependence of the growth kinetics on the crystal facets. We have found that the LPE growth of ultrathin multilayers in the In x Ga 1−x As y P 1−y/ GaAs system, with uniform layer thickness and without noticeable transition layers was possible. Furthermore, we have found anisotropic effects on non-planar substrates (i.e. faster kinetics in the (100) direction than in the (111) direction). These results can be utilized to grow, by LPE, visible lasers containing a multiple-quantum-well active region and buried structures.
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