Abstract
The process technology for the fabrication of 4H-SiC Static Induction Transistors (SITs) has been developed. Conventional contact UV lithography and self-aligned techniques have been employed. Al-outdiffusion following Rapid Thermal Annealing (RTA) has been determined as the cause for the increased reverse leakage and early forward turn-on of the gate-source junction. The fabricated transistors, exhibited a specific RON value in the region of 2mΩ•cm2 and 80 V turn-off voltage.
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