Abstract
In this paper, we study about the interface charges on the operation of 4H silicon carbide static induction transistors. The structure of SIT provides high breakdown voltage and high current density between the source and drain terminals. Influence of oxide charge in the ' shoulder' oxide region on the operation of a 4H-SiC SIT has been studied. The SIT device has been modeled and simulated with varying SIT dimensions, varying gate and drain voltage.
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