Abstract
Fabrication of thin film transistor (TFT) using rf sputtered ZnO as channel layer is described in this paper. Deposition condition of the ZnO channel layer is investigated. It is found that metal mesh shielding of the substrate and higher oxygen partial pressure help improve the on–off ratio of the device. Levinson’s expression of drain current is successfully applied to the transfer character of the device. TFT described here would likely find its use in large area FPD to cooperate with display elements that need large current driven.
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