Abstract
Nb3Sn-Pb Josephson tunnel juntions were fabricated using Nb3Sn thin films formed by a simple coevaporation technique, while the tunnel barriers were formed by RF oxidation in an Ar and O2 gas mixture. The I-V characteristics were measured at 4.2K, in which a sharp current rise at the gap voltage of 4.35mV was observed. The ratio of the subgap resistance to the normal one is as high as 6. The Nb3Sn-Pb tunnel junction prepared are of good quality.
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