Abstract
Li-doped ZnCoO (ZnCoO:Li) diluted magnetic semiconductor thin films were prepared on SiO 2 substrates by pulsed laser deposition. In ZnCoO:Li films, Co 2+ substituted Zn 2+ and Li occupied the interstitial sites behaving as donors. The ZnCoO:Li films are of high electron concentration in the 10 20 cm −3 order and acceptable crystal quality with a hexagonal wurtzite structure. No cluster, precipitate, or second phase was found from the X-ray diffraction pattern and Co k-edge X-ray absorption near-edge structure measurements. The sp–d exchange interactions between the band electrons and the localized d electrons of Co ions substituting Zn ions were observed. The magnetization of ZnCoO:Li film is 0.61 μB/Co, higher than that of the ZnCoO film (0.49 μB/Co). The enhanced defect density and electron concentration due to the introduced Li donors may answer for the improvement of ferromagnetism at room temperature.
Published Version
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