Abstract
Ultra thin film of polyamic acid having benzene and sulfonyloxyimide moieties was fabricated with a LB technique and then photosensitive polyimide LB film was obtained by the precursor method. Physical properties and photodegradation behavior of polyimide LB film were investigated by π-A isotherm, UV-Visible and FT-IR spectroscopic measurements. Especially, it has been found that the ultra thin LB film of polyimide is an effective positive type resist material for obtaining high lithographic resolution.
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