Abstract
We use a monolayer of self-assembled polystyrene (PS) spheres (220 nm indiameter) as a reactive ion etching (RIE) mask to fabricate large-scale (more than1 cm2), long-range-ordered,high-density Ge1Sb2Te4 (GST) phase-change material nanoparticle arrays. Atomic force microscopy (AFM) andscanning electron microscopy (SEM) images show that periodic and isolated GST nanoparticlearrays 30–80 nm high and 150–200 nm bottom diameter were formed. Phase transitions ofthe GST films and nanoparticle arrays were studied by subjecting the samples tohigh-resolution transmission electron microscopy (HRTEM) electron-beam radiation.Nanocrystals between 2 and 5 nm in diameter were observed for GST nanoparticle arrays dueto the large surface-to-volume ratio. The density of the GST arrays can reach as high as109 cm−2, which can lead to the realization of future high-density phase-change random accessmemory (PCRAM).
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