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Abstract
All in-plane aligned a-axis oriented YBa2Cu3Ox/Gd2CuO4/YBa2Cu3Ox superconductor/insulator/superconductor (SIS) junction structures are fabricated by a pulsed laser deposition technique and their microstructures are characterized. An insulating barrier of Gd2CuO4 with an atomic graphoepitaxial relation is selected from a lattice-matching point of view for the b- and c-axes of YBa2Cu3Ox at a deposition temperature of the YBa2Cu3Ox films. Preferred orientations and in-plane alignments of electrodes of YBa2Cu3Ox films and barriers of Gd2CuO4 films are confirmed by X-ray diffraction spectroscopy and an X-ray φ-scan technique. X-ray diffraction measurements revealed that all the YBa2Cu3Ox/Gd2CuO4/YBa2Cu3Ox films are a-axis oriented. The c-axes of the layers are also in-plane aligned.
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