Abstract
The method of fabrication of epitaxial layers of GaAs doped with Mn is described. Resistivity and Hall effect measurements are made on various samples in the temperature range 77–300°K. The experimental results are used to determine the densities N a , N d of acceptors and compensating donors, the activation energy E a of the acceptor level associated with Mn and also the mobility of the carriers. These values are calculated using a model involving the two valence bands carriers. The results obtained confirm that the acceptor doping presents a saturation. They are compared to results previously published. A new value, rather close to unity, is obtained for the distribution coefficient of Mn in the case of low doping.
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