Fabrication and characterization of silicon SPADs with doping compensated avalanche region

Abstract

The features of avalanche region are of importance of SPAD. An ideal broad and rectangular avalanche field may reduce dark count rate but could hardly be realized by actual fabricating technology. We propose a new fabrication process including successive boron and phosphorus diffusions for building special doping compensated avalanche region. A low dark count rate below 10 cps at −20 °C and high photon detection efficiency about 70% at 850 nm are achieved. The afterpulsing probabilities are 2.3% at 20 °C and 3% at 0 °C. FWHM of time resolution is 340ps.