Abstract
An innovative process is proposed to fabricate radiation hardened silicon-on-insulator (SOI) wafers by combining the Si+ implantation modification with ion-cut technique. The obtained SOI materials present superior quality in film thickness, uniformity and defect density, while the Si nanocrystals formed by Si+ implantation are evidenced. The radiation response of pseudo-MOS transistors demonstrates that the hardening process can significantly improve the total ionizing dose (TID) radiation tolerance of SOI wafers by creating Si nanocrystals to reduce the accumulation of radiation-induced positive trapped charges in oxides. The electrical parameters such as electron/hole mobility (μe/μh) and Si film/BOX interface traps density (Dit) are extracted from the pseudo-MOS technique and illustrate the efficiency and stability under different implantation condition. Finally, the proposed radiation hardening process may provide a practical and reliable strategy to reinforce the TID tolerance of SOI wafers, thus expediting the development of SOI-based devices and circuits for space applications.
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