Fabrication and Characterization of Double-Layer Pb(Zr,Ti)O3 Thin Films for Micro-Electromechanical Systems

Abstract

In this paper, we address the fabrication and characterization of bimorph structures with relatively thick double-layered Pb(Zr,Ti)O3 (PZT) thin films. The PZT/PZT layers are deposited by RF magnetron sputtering. Hysteresis loops of polarization and electrical field for the top and bottom PZT thin films revealed good ferroelectric characteristics with remanent polarization at approximately 20 µC/cm2 and a coersive electric field of about 100 kV/cm. The vibration tests of fabricated bimorph cantilevers during electrical voltage application revealed a twofold displacement compared with single layer driving, and the piezoelectric coefficient value d31 is estimated to be 13 pm/V. The residual stress difference between the top and bottom layers after the annealing process is calculated to be -0.32 MPa. For a further thickening of the bimorph structure, 6-µm-thick PZT/PZT is also sputtered. The thicker bimorph has a smaller residual stress difference, -30 MPa, between the two layers prepared without the annealing process. The evaluated results demonstrate that the PZT/PZT bimorph structures are applicable to micro-electromechanical systems (MEMS) devices.