Abstract
Known amounts of carbon were implanted into a set of Si1−xGex alloy films (0<x<0.35) to provide quantification standards for C composition measurements of Si1−x−yGexCy alloys by secondary ion mass spectrometry. The implanted doses were fixed to within ±2%, the thicknesses of implanted films were measured to within ±1% using high-resolution electron microscopy, and the Ge concentrations were determined to within ±0.5% using Rutherford backscattering spectroscopy. For Si:Ge ratios in the range Si66Ge34 to Si91Ge9, the relative sensitivity factor for carbon with respect to silicon, and for carbon relative to germanium, both decreased substantially with increasing Ge content.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
