Fabrication and characteristics of In 0.48Ga 0.52P/In 0.20Ga 0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy

Abstract

In 0.48Ga 0.52P/In 0.20Ga 0.80As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The electron mobility and sheet carrier density at room temperature were 1700 cm 2/Vs and 3.3×10 12 cm −2, respectively. Despite the low two-dimensional electron gas (2DEG) mobility, a peak transconductance ( G m) of 267 mS/mm and peak drain current density ( I ds) of 360 mA/mm were measured for a p-HEMT device with 1.25 μm gate length. A high gate–drain breakdown voltage ( BV gd) of 33 V was measured, a value which is more than doubled compared to that of a conventional Al 0.30Ga 0.70As/In 0.20Ga 0.80As/GaAs device. The drain–source breakdown voltage ( BV ds) was 12.5 V. The results showed that the In 0.48Ga 0.52P/In 0.20Ga 0.80As/GaAs material system grown by SSMBE using the valved phosphorus cracker cell for the In 0.48Ga 0.52P layers is clearly viable for p-HEMT device applications.