0.25-μm gate In 0.48Ga 0.52P/In 0.20Ga 0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

Abstract

In 0.48Ga 0.52P/In 0.20Ga 0.80As/GaAs pseudomorphic high electron mobility transistor (p-HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. Device with a mushroom gate of 0.25 μm gate length and 80 μm gate width achieved a peak transconductance ( G m) of 420 mS/mm and drain current density of nearly 500 mA/mm. A high cut-off frequency ( f T) of 58 GHz and maximum oscillation frequency ( f max) of 120 GHz were obtained. The results showed that the In 0.48Ga 0.52P/In 0.20Ga 0.80As/GaAs material system grown by SSMBE using the valved phosphorus cracker cell for the In 0.48Ga 0.52P Schottky and spacer layers is clearly a viable technology for high frequency p-HEMT device applications.