Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications

Abstract

Suspended silicon nanowires with narrow (∼10nm) conduction channel are fabricated and characterised for further development of low power nano-electro-mechanical (NEM) switching devices using CMOS compatible fabrication. Double suspension fabrication process using an amorphous silicon sacrificial layer and xenon difluoride etching is employed for thermally-oxidised suspended Si nanowire channels. Device current–voltage characteristics demonstrate depletion mode operation of heavy doped nanowires with an on/off ratio of 105 and a threshold voltage of −1.8V. In plane electromechanical pull-in to side gate is demonstrated and confirmed to be consistent with finite element analysis.