Demonstration of gate-all-around FETs based on suspended CVD-grown silicon nanowires

Abstract

For the first time, herein we demonstrate gate-all-around field-effect-transistors having a horizontally suspended nanowire channel. The suspended nanowires were grown using the vapor-liquid-solid technique. The gate-all-around field-effect-transistor exhibited a p-type accumulation mode with desirable performance. To study properties of the connection between the nanowire channels and electrodes, measurements of surface photocurrent and temperature dependent current-voltage between source and drain electrodes were carried out. The results including an energy band diagram are discussed in this paper.