Abstract

Using sputtering-deposited AlN insulator films, we fabricated and analyzed AlN/GaAs(001) and AlN/Ge/GaAs(001) metal–insulator–semiconductor (MIS) structures; the former is obtained by the direct deposition of AlN on GaAs, while the latter includes a Ge interlayer between AlN and GaAs. By current–voltage (I–V) measurements, we obtained similar good insulating properties for both MIS structures. On the other hand, we observed rather different frequency dispersions in the capacitance–voltage (C–V) characteristics of the MIS structures; the AlN/Ge/GaAs(001) MIS structure exhibits a significantly smaller dispersion than the AlN/GaAs(001) MIS structure, attributed to a smaller interface state density, as confirmed by analysis using the conductance method. From the X-ray photoelectron spectroscopy analysis results of the MIS interfaces, we found that, in comparison with the AlN/GaAs(001) interface, the AlN/Ge/GaAs(001) interface exhibits suppressed As deficiency and Ga–O bonding, with an indication of their relation to interface states.

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