Abstract
Cadmium Telluride crystals of 26 mm in diameter and 5-6 cm in length were grown by the Vertical Gradient Freezing method. Analyses of grown crystals showed that the average etch pit density was 10^4〜10^5 cm^<-2>. The range of measured carrier concentrations and carrier mobility were from 10^<11> to 10^<15> cm^<-3> and 10^2 to 10^4 cm^2/V ・ s, respectively. In order to understand the effect of growth parameters on the crystal/melt interface shape, a numerical simulation study was carried out. Numerical results show that the growth interface was convex toward the melt during growth. The effects of crucible rotation and crucible material on the growth interface were discussed.
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