Abstract
A numerical simulation study was carried out for the crystal growth of GaSb from a Ga-solution by the traveling heater method (THM). The effects of crucible temperature, crucible rotation and crucible material on the crystal/solution interface shape were investigated. It was found that the interface curvature increases with increasing crucible temperature. In such a case, the use of crucible rotation was very beneficial in suppressing the natural convection in the melt, and in obtaining an interface with smaller curvature. When the crucible temperature was lower (while keeping the same temperature gradient), the interface shape was slightly convex towards the crystal. The crucible rotation did not affect the interface shape significantly. The use of a pBN crucible required a higher growth temperature compared with a system of SiO 2 or carbon crucible.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
