Controlling the growth interface shape in the growth of CdTe single crystals by the traveling heater method

Abstract

This article presents the results of a numerical simulation study carried out for controlling the growth interface shape in the THM (Traveling Heater Method) growth of CdTe single crystals. Applying different thermal boundary conditions and a crucible rotation, the optimum growth conditions for a desired interface shape were obtained. The simulation results show that by controlling the heat removal at the bottom of the crucible, a flatter (or slightly concave towards the crystal) growth interface can be maintained throughout the growth process. A crucible rotation rate of 5 rpm seems optimal for a favorable growth interface shape. To cite this article: S. Dost, Y.C. Liu, C. R. Mecanique 335 (2007).