Abstract
In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (VON) maintaining high on-state current (ION) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower VON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher ION and 7 mV/dec smaller average SS with the same VON as that for L-shaped TFET.
Highlights
Tunnel field-effect transistor (TFET) has been regarded as a promising candidate to replace the metal-oxide-semiconductor FET (MOSFET) for a low power device because its subthreshold swing (SS) can be scaled less than 60 mV/dec [1,2,3,4,5,6,7,8]
Si-based TFET suffers from low-level on-state current (ION ) due to its limited band-to-band tunneling (BTBT) rate
With the help of a novel structure [20]. In spite of these advantages, there is a drawback that turn-on voltage (V ON ), which is defined as gate voltage (V GS ) when BTBT starts to occur, becomes much higher than conventional TFET
Summary
Tunnel field-effect transistor (TFET) has been regarded as a promising candidate to replace the metal-oxide-semiconductor FET (MOSFET) for a low power device because its subthreshold swing (SS) can be scaled less than 60 mV/dec [1,2,3,4,5,6,7,8]. The electrical performance of the F-shaped TFET with a single-source region (i.e., one finger) is examined (Figure 1b). Many parameters such as TS, lateral length of tunnel region (LT), and space above and below source (TE) have been set as variables. W (i.e., one finger) is 1 μm with a single-source region examined (Figure 1b) This is explained by the surface potential depending on LT with the help of
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
