Abstract
This paper presents the simulation based study for electrical characteristics such as surface potential, drain current, threshold voltage and subthreshold swing of Silicon-on-Insulator (SOI) tunnel field effect transistors (TFETs) with ferroelectric stacked gate oxide structures. We have used ferroelectric materials such as Pb (Zr0.45Ti0.55)O 3 (PZT) over oxide layer in stacked gate manner in the simulation. PZT implement as a step-up voltage transformer that will amplify the applied gate voltage which leading to higher drain current and low subthreshold swing with respect to conventional SOI TFET. All the simulation results have been obtained by using ATLAS, 2-D device simulation software.
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