Abstract
Anomalous Hall effect (AHE) in ferrimagnetic Mn4N epitaxial films grown by molecular-beam epitaxy is investigated. The longitudinal conductivity σxx is within the superclean regime, indicating Mn4N is a highly conducting material. We further demonstrate that the AHE signal in 40-nm-thick films is mainly due to the extrinsic contributions based on the analysis fitted by ρAH=a′ρxx0+bρxx2 and σAH∝σxx. Our study not only provide a strategy for further theoretical work on antiperovskite manganese nitrides but also shed promising light on utilizing their extrinsic AHE to fabricate spintronic devices.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
