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https://doi.org/10.1109/irmmw-thz.2011.6104913
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Cite Publication Date: Oct 1, 2011 |
 Citations: 1 |
Affiliation: Kyoto University
We report on the extraordinary carrier multiplication phenomena of GaAs quantum wells under only intense terahertz (THz) pulse irradiation. The intensity of exciton luminescence is enhanced more than about 103 times with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm with a threshold-like behavior.
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