Abstract

The nonlinear interactions of GaAs quantum wells with intense single cycle terahertz (THz) pulses with amplitudes exceeding 1 MV/cm have been studied. We demonstrated for the first time that the number of carriers is enhanced 103 times more with an increase of the electric field amplitude of the THz pulse from 0.5 to 1 MV/cm, eventually which leading a bright near-infrared luminescence. This highly efficient carrier multiplication process with a threshold-like behavior implies that the carriers driven under intense THz pulse can efficiently gain enough high kinetic energy to induce cascading impact ionizations.

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