Abstract
A novel extraction method for trap densities in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is developed. In this method, a new calculation procedure for efficiently determining surface potentials (SPs) in the a-IGZO layer is used with low-frequency capacitance-voltage ( $C$ - $V$ ) measurements. To enhance the computational efficiency of the extraction method, we propose an approximate expression relating the front-side and back-side SPs, so that it is possible to determine SPs without conventionally required calculation steps, such as either meshing the a-IGZO layer or calculating the potential profiles for the entire layer. The extraction method is tested by using low-frequency $C$ - $V$ curves of a self-aligned a-IGZO TFT to minimize the influence of parasitic capacitances and resistances. This method is expected to facilitate the extraction of trap densities, and contribute to characterization and modeling of a-IGZO TFTs.
Published Version
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