Abstract
A detailed express procedure of basic electro-physical parameters determination for power Schottky diodes has been presented. The procedure was approved using commercial diodes based on 4H-SiC by CREE, Inc. It relies on the device physical model only and almost excludes the usage of experimental data as the initial calculation parameters. During the calculation procedure the information available in the device datasheet is mainly used. If necessary, it may be supplemented by simple C-V and I-V characterization data of the device. The calculation technique is remarkable for its ability to extract electro-physical parameters of Schottky diodes with high accuracy and reliability. This is due to both: the usage of analytical equations instead of mathematical processing of the device characterization data presented graphically as well as the implementation of reliability control of obtained electro-physical parameters by calculating on their basis already known characteristics and parameters given in the datasheet or in the literature. The results of this work could promote the development of power Schottky and p-i-n diode operation theory at high temperatures.
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