Abstract
The effective surface recombination velocity of different polysilicon contacts is inferred from a theoretical-experimental comparison of base (emitter recombination) currents as a function of temperature. For the polysilicon contacts, specially processed to break up the residual interfacial layer and to have columnar grains, the functional dependence of the inferred surface recombination velocity on temperature is demonstrated to be, within the experimental error, that for a contact which acts as an extension of the underlying emitter. In contrast, data from contacts, having an intentionally introduced interfacial layer, are demonstrated to be in disagreement with the extended-emitter concept.
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