Abstract
Mobility in (110)-oriented ultrathin-body (UTB) n-type metal oxide semiconductor field-effect transistor (nMOSFET) with single- and double-gate operations in the silicon-on-insulator (SOI) thickness (tSOI) range of less than 5 nm is experimentally investigated. Monotonic mobility degradation as a decrease in tSOI is observed with single-gate operation due to quantum confinement. Mobility with double-gate operation is higher than that with single-gate operation in the tSOI range of less than 5 nm. Moreover, mobility enhancement at tSOI of 5 nm is observed with double-gate operation. The physical origin of the high mobility with double-gate operation is attributable to volume inversion that decreases surface roughness scattering by relaxed electric field, which is confirmed on the basis of calculations and the temperature dependence of the mobility.
Published Version
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