Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

Abstract

We present an experimental study of effective carrier mobility ( µeff) of multi-fin-type double-gate metal–oxide–semiconductor field-effect transistors (FinFETs) with a (111) channel surface fabricated by orientation-dependent wet etching. The peak values of the obtained µeff of electrons and holes are approximately 300 and 160 cm2/(V s), respectively, which are close to those in (111) bulk metal–oxide–semiconductor field-effect transistors (MOSFETs). Moreover, the effective electric field (Eeff) dependence of the µeff of electrons and holes shows a good agreement with the mobility universal curves of (111) bulk MOSFETs. These results indicate that the quality and channel surface roughness of Si-fins by orientation-dependent wet etching are excellent. The obtained results of µeff are very useful for the modeling and design of FinFET-complementary metal–oxide–semiconductor (CMOS) circuits and the developed wet etching technique is very attractive in the fabrication of ultrathin and high-quality Si-fin channels.