Abstract
In the present work an experimental apparatus is described and experimental results are presented on the drift velocity of electrons and holes in silicon in the 2·5–12 kV/cm electric field range and at several temperatures between 300° and 77°K. Moreover, at temperatures near 77°K, an anisotropy effect is shown for electrons by means of samples cut in the (111) and (100) planes. After discussing the method of measurement, the experimental data are compared with the published data.
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