Experimental Research on the Characteristics of SiC MOSFET Module at 180 °C

Abstract

SiC MOSFET is theoretically suitable for high- temperature applications due to its wide band gap and high thermal conductivity. In response to the lack of relevant experimental research on high-temperature characteristics of high-power SiC MOSFET module, this paper takes 1200V 300A SiC MOSFET module as the research object to evaluate the operation capability of the high-power SiC MOSFET module at 180 °C. Firstly, static and dynamic characteristics of the module are measured at high temperature, and superior high- temperature characteristics have been proved from two aspects of transient electrical characteristics and loss. Then, the thermal equivalent high-temperature power operation test is completed by using the heat-sensitive electrical parameter method. The test value of junction temperature is 186 °C, and the operating current is 280 A. The test verifies that the module can achieve high-temperature operation through reasonable thermal design. The experimental results show that the 1200V 300A SiC MOSFET module has the ability to operate at junction temperature of 180 °C and a good application prospect of high temperature.