Performance of a 1.2kV, 288A full-SiC MOSFET module based on low inductance packaging layout

Abstract

This paper presents a novel designed SiC MOSFET module based on low-inductance layout using split damping capacitors. The voltage rating of this power module is 1200V and the current rating is 288A. The influence of parasitic inductance on SiC MOSFET in one-phase-leg module is analyzed, and the design of the SiC MOSFET module is also described in this work. The double pulse test is used to evaluate and compare the characteristics of proposed SiC MOSFET module with a 1200V, 300A commercial SiC MOSFET. The overshoot voltage at 600V, 110A during turn-off transient of proposed SiC MOSFET module is smaller than the commercial SiC MOSFET, which means lower parasitic inductance for SiC MOSFET module. The voltage spike of such SiC module remains insensitive to variation of temperature when tested up to the baseplate temperature of 100 0C.