Design considerations and comparison of high-speed gate drivers for Si IGBT and SiC MOSFET modules

Abstract

The high switching frequency (> 20 kHz) of SiC MOSFET module makes it as an attractive alternative of Si IGBT module for high power density applications. Since SiC MOSFET and Si IGBT have the similar MOS-gated structure, it is normally regarded that the gate driver of SiC MOSFET can directly inherit from that of Si IGBT. However, considering the different device physics properties, some special design considerations need to be taken. In addition, the higher dv/dt and di/dt in SiC MOSFET module leads to more serious EMI issues, which will comprise the switching speed in return. In this work, the high-speed gate drivers for Si IGBT and SiC MOSFET modules with similar ratings are designed and optimized. Based on the experiment of switching characterization, the considerations of gate driver design to migrate from Si IGBT module to SiC MOSFET module are presented. And the EMI issue is the major challenge in the gate driver design for SiC MOSFET module.