Abstract
The temperature dependence of bandgap energy of GaAs 0.98N 0.02 and Ga 0.95In 0.05As 0.98N 0.02 compounds has been analysed in order to determine the C MN matrix element of the band anticrossing model. We have found that the element equals 2.48 and 2.60 eV for GaAs 0.98N 0.02 and Ga 0.95In 0.05As 0.98N 0.02 layers, respectively. When the same value has been assumed for annealed layers, an increase in the energy of the resonant nitrogen level E N has been obtained. Two possible mechanisms leading to the increase in this energy are discussed in this work.
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